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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD823 DESCRIPTION *Collector Current: IC= 6A *Collector-Emitter Breakdown Voltage: V(BR)CEO= 90V(Min.) APPLICATIONS *Designed for B/W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 200 90 7 6 10 40 .cn mi e V V V A A ICM Collector Current-Peak Total Power Dissipation @ TC=25 Junction Temperature PC W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD823 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 B 90 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain fT Current-Gain--Bandwidth Product tf Fall Time w w w. sem isc VCB= 40V; IE= 0 VEB= 4V; IC= 0 IC= 3A; VCE= 5V IC= 1A; VCE= 5V IC= 5A; IB1= 0.6A .cn i 20 15 1.5 V 0.1 mA 0.1 mA MHz 1.0 s isc Websitewww.iscsemi.cn 2 |
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